Anisotropic Magnetoresistance in GaMnAs films

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dc.creatorWang, K. Y.
dc.creatorEdmonds, K. W.
dc.creatorCampion, R. P.
dc.creatorZhao, L. X.
dc.creatorNeumann, A. C.
dc.creatorFoxon, C. T.
dc.creatorGallagher, B. L.
dc.creatorMain, P. C.
dc.date2002-11-29
dc.date.accessioned2026-07-07T02:48:28Z
dc.date.available2026-07-07T02:48:28Z
dc.descriptionThe magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn content, which means that the magnetic disorder or defects scattering increases with increasing of Mn content. And also the magneto-crystalline anisotropy increases with increasing of Mn concentration.
dc.descriptionPresented at ICPS-26, July 2002
dc.identifierhttps://arxiv.org/abs/cond-mat/0211697
dc.identifierhttp://arxiv.org/abs/cond-mat/0211697
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20420
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleAnisotropic Magnetoresistance in GaMnAs films
dc.typetext

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