Alloying mechanisms for epitaxial nanocrystals

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The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this letter. Intermixing during growth, surface diffusion and intra-island diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for dome-shaped Ge:Si (001) islands. For samples grown at a faster rate, intermixing during growth was reduced. Si surface diffusion dominates during H$_2$ annealing whereas Ge surface diffusion and intra-island diffusion prevail during annealing in a PH$_3$ environment.

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/122843

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0701710
 http://arxiv.org/abs/cond-mat/0701710

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arXiv