Alloying mechanisms for epitaxial nanocrystals

Simple item page
dc.creatorLeite, M. S.
dc.creatorMedeiros-Ribeiro, G.
dc.creatorKamins, T. I.
dc.creatorWilliams, R. Stanley
dc.date2007-01-29
dc.date2007-01-30
dc.date.accessioned2026-07-07T07:43:29Z
dc.date.available2026-07-07T07:43:29Z
dc.descriptionThe different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this letter. Intermixing during growth, surface diffusion and intra-island diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for dome-shaped Ge:Si (001) islands. For samples grown at a faster rate, intermixing during growth was reduced. Si surface diffusion dominates during H$_2$ annealing whereas Ge surface diffusion and intra-island diffusion prevail during annealing in a PH$_3$ environment.
dc.identifierhttps://arxiv.org/abs/cond-mat/0701710
dc.identifierhttp://arxiv.org/abs/cond-mat/0701710
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/122843
dc.subjectMaterials Science
dc.titleAlloying mechanisms for epitaxial nanocrystals
dc.typetext

Files

Collections

arXiv