Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches

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We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Gamma, L and X valleys, and heavy holes. The emitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lorentz dielectric function. As the InGaAs alloy approaches InAs an increase in the emitted power is observed, and this is attributed to a greater electron mobility. Additionally, low-temperature grown and ion-implanted InGaAs are modelled using a finite carrier trapping time. At sub-picosecond trapping times the terahertz bandwidth is found to increase significantly at the cost of a reduced emission power.
9 pages, 7 figures

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/101628

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0507252
 http://arxiv.org/abs/cond-mat/0507252
 Solid State Communications 136 595 (2005)
 doi:10.1016/j.ssc.2005.09.037

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arXiv