Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches

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dc.creatorLloyd-Hughes, J.
dc.creatorCastro-Camus, E.
dc.creatorJohnston, M. B.
dc.date2005-07-11
dc.date2005-11-17
dc.date.accessioned2026-07-07T06:41:19Z
dc.date.available2026-07-07T06:41:19Z
dc.descriptionWe simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Gamma, L and X valleys, and heavy holes. The emitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lorentz dielectric function. As the InGaAs alloy approaches InAs an increase in the emitted power is observed, and this is attributed to a greater electron mobility. Additionally, low-temperature grown and ion-implanted InGaAs are modelled using a finite carrier trapping time. At sub-picosecond trapping times the terahertz bandwidth is found to increase significantly at the cost of a reduced emission power.
dc.description9 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0507252
dc.identifierhttp://arxiv.org/abs/cond-mat/0507252
dc.identifierSolid State Communications 136 595 (2005)
dc.identifierdoi:10.1016/j.ssc.2005.09.037
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101628
dc.subjectMaterials Science
dc.titleSimulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
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