Conductance fluctuations near Anderson transition
| dc.creator | Ghosh, Arindam | |
| dc.creator | Raychaudhuri, A. K. | |
| dc.date | 1999-06-07 | |
| dc.date.accessioned | 2026-07-07T03:13:38Z | |
| dc.date.available | 2026-07-07T03:13:38Z | |
| dc.description | In this paper we report measurements of conductance fluctuations in single crystal samples of Si doped with P and B close to the critical composition of the metal insulator transition (n_c \approx 4 x 10^18 /cc). The measurements show that the noise, which arises from bulk sources, does not diverge as the Ioffe-Regal limit (k_{F}l -> 1) is approached from the metallic side. At room temperatures, the magnitude of the noise shows a shallow maximum around k_{F}l \approx 1.5 and drops sharply as the insulating state is approached. | |
| dc.description | 8 pages of text in preprint form and 4 eps figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9906088 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9906088 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/29374 | |
| dc.subject | Disordered Systems and Neural Networks | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Conductance fluctuations near Anderson transition | |
| dc.type | text |