Electrostically defined few-electron double quantum dot in silicon

Lim, W. H.; Huebl, H.; van Beveren, L. H. Willems; Rubanov, S.; Spizzirri, P. G.; Angus, S. J.; Clark, R. G.; Dzurak, A. S.

Electrostically defined few-electron double quantum dot in silicon

Authors

Lim, W. H.

Huebl, H.

van Beveren, L. H. Willems

Description

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.
4 pages, 3 figures, accepted for Applied Physics Letters