Electrostically defined few-electron double quantum dot in silicon

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dc.creatorLim, W. H.
dc.creatorHuebl, H.
dc.creatorvan Beveren, L. H. Willems
dc.creatorRubanov, S.
dc.creatorSpizzirri, P. G.
dc.creatorAngus, S. J.
dc.creatorClark, R. G.
dc.creatorDzurak, A. S.
dc.date2009-04-02
dc.date.accessioned2026-07-07T13:08:47Z
dc.date.available2026-07-07T13:08:47Z
dc.descriptionA few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.
dc.description4 pages, 3 figures, accepted for Applied Physics Letters
dc.identifierhttps://arxiv.org/abs/0904.0311
dc.identifierhttp://arxiv.org/abs/0904.0311
dc.identifierAppl. Phys. Lett. 94, 173502 (2009)
dc.identifierdoi:10.1063/1.3124242
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/228527
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectrostically defined few-electron double quantum dot in silicon
dc.typetext

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