Analysis of Strain Fields in Silicon Nanocrystals

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Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however it becomes nonuniform within 2-3 Ådistance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconsile their coexistence by an atomistic strain analysis.
Published in Applied Physics Letters Vol. 94, 191914 (2009)

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Mesoscale and Nanoscale Physics, Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/230901

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0905.3277
 http://arxiv.org/abs/0905.3277
 Appl. Phys. Lett. 94, 191914 (2009)
 doi:10.1063/1.3138163

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arXiv