Analysis of Strain Fields in Silicon Nanocrystals

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dc.creatorYılmaz, Dündar E.
dc.creatorBulutay, Ceyhun
dc.creatorÇağın, Tahir
dc.date2009-05-20
dc.date.accessioned2026-07-07T13:16:46Z
dc.date.available2026-07-07T13:16:46Z
dc.descriptionStrain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however it becomes nonuniform within 2-3 Ådistance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconsile their coexistence by an atomistic strain analysis.
dc.descriptionPublished in Applied Physics Letters Vol. 94, 191914 (2009)
dc.identifierhttps://arxiv.org/abs/0905.3277
dc.identifierhttp://arxiv.org/abs/0905.3277
dc.identifierAppl. Phys. Lett. 94, 191914 (2009)
dc.identifierdoi:10.1063/1.3138163
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230901
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleAnalysis of Strain Fields in Silicon Nanocrystals
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