Single Event Effects in the Pixel readout chip for BTeV

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dc.creatorChiodini, G.
dc.creatorAppel, J. A.
dc.creatorCardoso, G.
dc.creatorChristian, D. C.
dc.creatorColuccia, M. R.
dc.creatorHoff, J.
dc.creatorKwan, S. W.
dc.creatorMekkaoui, A.
dc.creatorYarema, R.
dc.creatorZimmermann, S.
dc.date2001-11-29
dc.date.accessioned2026-07-07T11:30:16Z
dc.date.available2026-07-07T11:30:16Z
dc.descriptionIn future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.
dc.description15 pages, 6 Postscript figures
dc.identifierhttps://arxiv.org/abs/hep-ex/0111094
dc.identifierhttp://arxiv.org/abs/hep-ex/0111094
dc.identifierNucl.Instrum.Meth.A501:183-188,2001
dc.identifierdoi:10.1016/S0168-9002(02)02030-2
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/196962
dc.subjectHigh Energy Physics - Experiment
dc.titleSingle Event Effects in the Pixel readout chip for BTeV
dc.typetext

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