Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

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This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.
Presented at CLEO QELS, Long Beach, California (May 2006)

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Instrumentation and Detectors

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http://salesiana.dossiersoluciones.com/handle/123456789/113091

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/physics/0605073
 http://arxiv.org/abs/physics/0605073

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arXiv