Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

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dc.creatorWarburton, Ryan E.
dc.creatorPellegrini, Sara
dc.creatorTan, Lionel
dc.creatorNg, Jo Shien
dc.creatorKrysa, Andrey
dc.creatorGroom, Kris
dc.creatorDavid, John P. R.
dc.creatorCova, Sergio
dc.creatorBuller, Gerald S.
dc.date2006-05-08
dc.date.accessioned2026-07-07T07:14:57Z
dc.date.available2026-07-07T07:14:57Z
dc.descriptionThis paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.
dc.descriptionPresented at CLEO QELS, Long Beach, California (May 2006)
dc.identifierhttps://arxiv.org/abs/physics/0605073
dc.identifierhttp://arxiv.org/abs/physics/0605073
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/113091
dc.subjectInstrumentation and Detectors
dc.titleDesign, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors
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