Electroluminescence from single nanowires by tunnel injection: an experimental study

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We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.
6 pages, 6 figures

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Other Condensed Matter

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http://salesiana.dossiersoluciones.com/handle/123456789/135816

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0708.1266
 http://arxiv.org/abs/0708.1266
 Nanotechnology 18 (2007) 235205
 doi:10.1088/0957-4484/18/23/235205

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arXiv