Electroluminescence from single nanowires by tunnel injection: an experimental study

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dc.creatorZimmler, Mariano A.
dc.creatorBao, Jiming
dc.creatorShalish, Ilan
dc.creatorYi, Wei
dc.creatorYoon, Joonah
dc.creatorNarayanamurti, Venkatesh
dc.creatorCapasso, Federico
dc.date2007-08-09
dc.date.accessioned2026-07-07T08:22:55Z
dc.date.available2026-07-07T08:22:55Z
dc.descriptionWe present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.
dc.description6 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/0708.1266
dc.identifierhttp://arxiv.org/abs/0708.1266
dc.identifierNanotechnology 18 (2007) 235205
dc.identifierdoi:10.1088/0957-4484/18/23/235205
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135816
dc.subjectOther Condensed Matter
dc.titleElectroluminescence from single nanowires by tunnel injection: an experimental study
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