Strong electron correlation effects in non-volatile electronic memory devices

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We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realisation of a novel type of strongly correlated electron device.
4pages, 4 figures

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Strongly Correlated Electrons, Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/24276

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0406646
 http://arxiv.org/abs/cond-mat/0406646

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arXiv