Strong electron correlation effects in non-volatile electronic memory devices

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dc.creatorRozenberg, Marcelo J.
dc.creatorInoue, Isao H.
dc.creatorSanchez, Maria Jose
dc.date2004-06-25
dc.date.accessioned2026-07-07T02:58:51Z
dc.date.available2026-07-07T02:58:51Z
dc.descriptionWe investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realisation of a novel type of strongly correlated electron device.
dc.description4pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0406646
dc.identifierhttp://arxiv.org/abs/cond-mat/0406646
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24276
dc.subjectStrongly Correlated Electrons
dc.subjectMaterials Science
dc.titleStrong electron correlation effects in non-volatile electronic memory devices
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