Monolithic Pixel Sensors in Deep-Submicron SOI Technology

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Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.
Proceedings of the PIXEL 2008 International Workshop, FNAL, Batavia, IL, 23-26 September 2008. Submitted to JINST - Journal of Instrumentation

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Instrumentation and Detectors

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http://salesiana.dossiersoluciones.com/handle/123456789/229600

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0903.3205
 http://arxiv.org/abs/0903.3205
 JINST 4:P04007,2009
 doi:10.1088/1748-0221/4/04/P04007

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arXiv