Monolithic Pixel Sensors in Deep-Submicron SOI Technology

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dc.creatorBattaglia, Marco
dc.creatorBisello, Dario
dc.creatorContarato, Devis
dc.creatorDenes, Peter
dc.creatorGiubilato, Piero
dc.creatorGlesener, Lindsay
dc.creatorMattiazzo, Serena
dc.creatorVu, Chinh Qu
dc.date2009-03-18
dc.date.accessioned2026-07-07T13:12:31Z
dc.date.available2026-07-07T13:12:31Z
dc.descriptionMonolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.
dc.descriptionProceedings of the PIXEL 2008 International Workshop, FNAL, Batavia, IL, 23-26 September 2008. Submitted to JINST - Journal of Instrumentation
dc.identifierhttps://arxiv.org/abs/0903.3205
dc.identifierhttp://arxiv.org/abs/0903.3205
dc.identifierJINST 4:P04007,2009
dc.identifierdoi:10.1088/1748-0221/4/04/P04007
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/229600
dc.subjectInstrumentation and Detectors
dc.titleMonolithic Pixel Sensors in Deep-Submicron SOI Technology
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