A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology

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dc.creatorBattaglia, Marco
dc.creatorBisello, Dario
dc.creatorContarato, Devis
dc.creatorDenes, Peter
dc.creatorGiubilato, Piero
dc.creatorGlesener, Lindsay
dc.creatorVu, Chinh
dc.date2007-09-26
dc.date.accessioned2026-07-07T11:19:35Z
dc.date.available2026-07-07T11:19:35Z
dc.descriptionThis letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV electron beam at the LBNL ALS.
dc.description4 pages, 5 figures, submitted to Nuclear Instruments and Methods A
dc.identifierhttps://arxiv.org/abs/0709.4218
dc.identifierhttp://arxiv.org/abs/0709.4218
dc.identifierNucl.Instrum.Meth.A583:526-528,2007
dc.identifierdoi:10.1016/j.nima.2007.09.042
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/193733
dc.subjectInstrumentation and Detectors
dc.titleA Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology
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