Effects of macroscopic-polarization built-in electrostatic fields in III-V nitrides multi-quantum-wells

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant.
RevTeX 10 pages, 9 figures

Keywords

Materials Science

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/28509

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/9808098
 http://arxiv.org/abs/cond-mat/9808098

Collections

arXiv