Effects of macroscopic-polarization built-in electrostatic fields in III-V nitrides multi-quantum-wells

Simple item page
dc.creatorFiorentini, V.
dc.creatorBernardini, F.
dc.creatorDella Sala, F.
dc.creatorDiCarlo, A.
dc.creatorLugli, P.
dc.date1998-08-10
dc.date1999-01-20
dc.date.accessioned2026-07-07T03:11:16Z
dc.date.available2026-07-07T03:11:16Z
dc.descriptionHuge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant.
dc.descriptionRevTeX 10 pages, 9 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/9808098
dc.identifierhttp://arxiv.org/abs/cond-mat/9808098
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28509
dc.subjectMaterials Science
dc.titleEffects of macroscopic-polarization built-in electrostatic fields in III-V nitrides multi-quantum-wells
dc.typetext

Files

Collections

arXiv