$B_{s,d} \to γγ$ Decay with the Fourth Generation

Huo, W. J.; Lu, C. D.; Xiao, Z. J.

$B_{s,d} \to γγ$ Decay with the Fourth Generation

Authors

Huo, W. J.

Lu, C. D.

Xiao, Z. J.

Description

We calculate the branching ratios of $B_{s,d}\to γγ$ decay in the sequential fourth generation model. We find that the theoretical values of the branching ratios, ${\rm BR}(B_{s}\toγγ)$, including the contributions of $t'$, are much different from the minimal standard model (SM) predictions. The new physics contribution can provide one to two orders enhancement to the standard model prediction of ${\rm BR}(B_{s}\toγγ)$. But due to the tiny values of 4th generation CKM matrix element $V_{t'd}^* V_{t'b}$, the new physics effect on ${\rm BR}(B_{d}\toγγ)$ is very small and can not be distinct from the SM prediction. It is shown that the decay $B_s\to γγ$ can give the test of new physics signals from the 4th generation model.
20 pages, 6 figures