$B_{s,d} \to γγ$ Decay with the Fourth Generation

dc.creatorHuo, W. J.
dc.creatorLu, C. D.
dc.creatorXiao, Z. J.
dc.date2003-02-19
dc.date.accessioned2026-07-07T03:49:12Z
dc.date.available2026-07-07T03:49:12Z
dc.descriptionWe calculate the branching ratios of $B_{s,d}\to γγ$ decay in the sequential fourth generation model. We find that the theoretical values of the branching ratios, ${\rm BR}(B_{s}\toγγ)$, including the contributions of $t'$, are much different from the minimal standard model (SM) predictions. The new physics contribution can provide one to two orders enhancement to the standard model prediction of ${\rm BR}(B_{s}\toγγ)$. But due to the tiny values of 4th generation CKM matrix element $V_{t'd}^* V_{t'b}$, the new physics effect on ${\rm BR}(B_{d}\toγγ)$ is very small and can not be distinct from the SM prediction. It is shown that the decay $B_s\to γγ$ can give the test of new physics signals from the 4th generation model.
dc.description20 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/hep-ph/0302177
dc.identifierhttp://arxiv.org/abs/hep-ph/0302177
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/42311
dc.subjectHigh Energy Physics - Phenomenology
dc.title$B_{s,d} \to γγ$ Decay with the Fourth Generation
dc.typetext

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