Phonon-assisted tunneling in an isolated double dot system

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Phonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet electron wavefunctions and energies. It is found that at small doublet energies the piezoelectric rates due to flexural modes give the dominant contribution. For small slab thicknesses the predicted rates are up to two orders of magnitude higher than for very thick slabs.
7 pages, 12 figures, shortened text and corrected typos. 8 pages, 14 figures

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Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/26076

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0503559
 http://arxiv.org/abs/cond-mat/0503559

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arXiv