Phonon-assisted tunneling in an isolated double dot system

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dc.creatorMartorell, J.
dc.creatorSprung, D. W. L.
dc.creatorYun, Guo Hong
dc.date2005-03-22
dc.date2005-05-14
dc.date.accessioned2026-07-07T03:04:17Z
dc.date.available2026-07-07T03:04:17Z
dc.descriptionPhonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet electron wavefunctions and energies. It is found that at small doublet energies the piezoelectric rates due to flexural modes give the dominant contribution. For small slab thicknesses the predicted rates are up to two orders of magnitude higher than for very thick slabs.
dc.description7 pages, 12 figures, shortened text and corrected typos. 8 pages, 14 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0503559
dc.identifierhttp://arxiv.org/abs/cond-mat/0503559
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26076
dc.subjectMesoscale and Nanoscale Physics
dc.titlePhonon-assisted tunneling in an isolated double dot system
dc.typetext

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