Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory

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Transition-metal oxides exhibiting a bistable resistance state are attractive for non-volatile memory applications. The relevance of oxygen vacancies (VO) for the resistance-change memory was investigated with x-ray fluorescence, infrared microscopy, and x-ray absorption spectroscopy using Cr-doped SrTiO3 as example. We propose that the microscopic origin of resistance switching in this class of materials is due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.
13 pages, 3 figures

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Materials Science, Strongly Correlated Electrons

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http://salesiana.dossiersoluciones.com/handle/123456789/132944

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0707.0563
 http://arxiv.org/abs/0707.0563

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arXiv