Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory

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dc.creatorJanousch, M.
dc.creatorMeijer, G. I.
dc.creatorStaub, U.
dc.creatorDelley, B.
dc.creatorKarg, S. F.
dc.creatorAndreasson, B. P.
dc.date2007-07-04
dc.date.accessioned2026-07-07T08:13:55Z
dc.date.available2026-07-07T08:13:55Z
dc.descriptionTransition-metal oxides exhibiting a bistable resistance state are attractive for non-volatile memory applications. The relevance of oxygen vacancies (VO) for the resistance-change memory was investigated with x-ray fluorescence, infrared microscopy, and x-ray absorption spectroscopy using Cr-doped SrTiO3 as example. We propose that the microscopic origin of resistance switching in this class of materials is due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.
dc.description13 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0707.0563
dc.identifierhttp://arxiv.org/abs/0707.0563
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/132944
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleRole of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory
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