Interlayer exchange coupling in (Ga,Mn)As based multilayers

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Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.
4 pages, 2 figures. To be published in physica status solidi c as the proceedings of the PASPS IV conference

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/168236

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0610696
 http://arxiv.org/abs/cond-mat/0610696
 phys. stat. sol. (c) 3, No. 12, 4070-4073 (2006)
 doi:10.1002/pssc.200672834

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arXiv