Interlayer exchange coupling in (Ga,Mn)As based multilayers

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dc.creatorGiddings, A. D.
dc.creatorJungwirth, T.
dc.creatorGallagher, B. L.
dc.date2006-10-25
dc.date.accessioned2026-07-07T10:00:04Z
dc.date.available2026-07-07T10:00:04Z
dc.descriptionExhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.
dc.description4 pages, 2 figures. To be published in physica status solidi c as the proceedings of the PASPS IV conference
dc.identifierhttps://arxiv.org/abs/cond-mat/0610696
dc.identifierhttp://arxiv.org/abs/cond-mat/0610696
dc.identifierphys. stat. sol. (c) 3, No. 12, 4070-4073 (2006)
dc.identifierdoi:10.1002/pssc.200672834
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/168236
dc.subjectMaterials Science
dc.titleInterlayer exchange coupling in (Ga,Mn)As based multilayers
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