Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems

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A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems.
Extract from PhD dissertation, 18 pages, 9 figures

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/25210

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0411130
 http://arxiv.org/abs/cond-mat/0411130
 B. Kaestner, "Planar-Geometry Light Emitting Diode: Optical Approach for Spin Detection in Low-Dimensional Systems", Dissertation published for the University of Cambridge, 2003

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