Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems

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dc.creatorKaestner, B.
dc.creatorHasko, D. G.
dc.creatorWilliams, D. A.
dc.date2004-11-05
dc.date.accessioned2026-07-07T03:01:53Z
dc.date.available2026-07-07T03:01:53Z
dc.descriptionA technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems.
dc.descriptionExtract from PhD dissertation, 18 pages, 9 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0411130
dc.identifierhttp://arxiv.org/abs/cond-mat/0411130
dc.identifierB. Kaestner, "Planar-Geometry Light Emitting Diode: Optical Approach for Spin Detection in Low-Dimensional Systems", Dissertation published for the University of Cambridge, 2003
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25210
dc.subjectMaterials Science
dc.titleDesign of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems
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