Interface-Induced Electron Spin Splitting in SiGe Heterostructures
Abstract
Description
Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. Consequences of the spin splitting on the electron spin relaxation time is discussed.
3 pages, 1 figure
3 pages, 1 figure