Interface-Induced Electron Spin Splitting in SiGe Heterostructures

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dc.creatorGolub, L. E.
dc.creatorIvchenko, E. L.
dc.date2003-02-14
dc.date.accessioned2026-07-07T02:49:40Z
dc.date.available2026-07-07T02:49:40Z
dc.descriptionSpin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. Consequences of the spin splitting on the electron spin relaxation time is discussed.
dc.description3 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/0302308
dc.identifierhttp://arxiv.org/abs/cond-mat/0302308
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20891
dc.subjectMesoscale and Nanoscale Physics
dc.titleInterface-Induced Electron Spin Splitting in SiGe Heterostructures
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