Raman Fingerprint of Charged Impurities in Graphene

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ~10^13 cm-2 are estimated from the G peak shift and width, and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on the scale of less than 1 micron.
3 pages, 5 figures

Keywords

Materials Science

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/145297

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0709.2566
 http://arxiv.org/abs/0709.2566
 Appl. Phys. Lett. 91, 233108 (2007)
 doi:10.1063/1.2818692

Collections

arXiv