Raman Fingerprint of Charged Impurities in Graphene

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dc.creatorCasiraghi, C.
dc.creatorPisana, S.
dc.creatorNovoselov, K. S.
dc.creatorGeim, A. K.
dc.creatorFerrari, A. C.
dc.date2007-09-17
dc.date.accessioned2026-07-07T08:52:30Z
dc.date.available2026-07-07T08:52:30Z
dc.descriptionWe report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ~10^13 cm-2 are estimated from the G peak shift and width, and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on the scale of less than 1 micron.
dc.description3 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0709.2566
dc.identifierhttp://arxiv.org/abs/0709.2566
dc.identifierAppl. Phys. Lett. 91, 233108 (2007)
dc.identifierdoi:10.1063/1.2818692
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/145297
dc.subjectMaterials Science
dc.titleRaman Fingerprint of Charged Impurities in Graphene
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