Electronic Spectra of Porous Silicon near Fermi Level

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Electronic spectra of porous Si have been investigated in the region $<$4 eV below the Fermi level with specimens subjected to in situ oxygenation and thermal treatments. The significance of DOS to the photoluminescence and its degradation in porous Si is discussed. Fine structure of the photoelectron spectra is found from specimens heated in oxygen at 600 K.
7 pages, LaTeX, 3 PostScript figures. Also available at ftp://phot2.niif.spb.su

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Condensed Matter

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http://salesiana.dossiersoluciones.com/handle/123456789/27648

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/9608071
 http://arxiv.org/abs/cond-mat/9608071

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arXiv