Electronic Spectra of Porous Silicon near Fermi Level

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dc.creatorAprelev, A. M.
dc.creatorLisachenko, A. A.
dc.creatorLaiho, R.
dc.creatorPavlov, A.
dc.creatorPavlova, Y.
dc.date1996-08-17
dc.date.accessioned2026-07-07T03:08:49Z
dc.date.available2026-07-07T03:08:49Z
dc.descriptionElectronic spectra of porous Si have been investigated in the region $<$4 eV below the Fermi level with specimens subjected to in situ oxygenation and thermal treatments. The significance of DOS to the photoluminescence and its degradation in porous Si is discussed. Fine structure of the photoelectron spectra is found from specimens heated in oxygen at 600 K.
dc.description7 pages, LaTeX, 3 PostScript figures. Also available at ftp://phot2.niif.spb.su
dc.identifierhttps://arxiv.org/abs/cond-mat/9608071
dc.identifierhttp://arxiv.org/abs/cond-mat/9608071
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27648
dc.subjectCondensed Matter
dc.titleElectronic Spectra of Porous Silicon near Fermi Level
dc.typetext

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