Temperature dependent deviations from ideal quantization of plateau conductances in GaAs quantum point contacts

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We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching technique we are able to observe the following unexpected feature: a linear temperature dependence of the measured mid-plateau conductance. We discuss an interpretation in terms of a temperature dependent, intrinsic series resistance, due to non-ballistic effects in the 2D-1D transition region. These results have been reproduced in several samples from different GaAs/GaAlAs heterostructures and observed in different experimental set-ups.
7 pages, 6 figures; to appear in proceedings of ICPS 2002, Edinburgh

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Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/19824

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0208452
 http://arxiv.org/abs/cond-mat/0208452

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arXiv