Temperature dependent deviations from ideal quantization of plateau conductances in GaAs quantum point contacts

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dc.creatorHansen, A. E.
dc.creatorKristensen, A.
dc.creatorBruus, H.
dc.date2002-08-23
dc.date.accessioned2026-07-07T02:46:56Z
dc.date.available2026-07-07T02:46:56Z
dc.descriptionWe present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching technique we are able to observe the following unexpected feature: a linear temperature dependence of the measured mid-plateau conductance. We discuss an interpretation in terms of a temperature dependent, intrinsic series resistance, due to non-ballistic effects in the 2D-1D transition region. These results have been reproduced in several samples from different GaAs/GaAlAs heterostructures and observed in different experimental set-ups.
dc.description7 pages, 6 figures; to appear in proceedings of ICPS 2002, Edinburgh
dc.identifierhttps://arxiv.org/abs/cond-mat/0208452
dc.identifierhttp://arxiv.org/abs/cond-mat/0208452
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19824
dc.subjectMesoscale and Nanoscale Physics
dc.titleTemperature dependent deviations from ideal quantization of plateau conductances in GaAs quantum point contacts
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