Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy

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An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.
Proceedings of the SIMD-4 conference. Hawaii, USA (December 1-5, 2003)

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/24125

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0406148
 http://arxiv.org/abs/cond-mat/0406148
 Superlattices and Microstructures 34, 539-545 (2003)
 doi:10.1016/j.spmi.2004.03.055

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