Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy

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dc.creatorYakunin, A. M.
dc.creatorSilov, A. Yu.
dc.creatorKoenraad, P. M.
dc.creatorWolter, J. H.
dc.creatorVan Roy, W.
dc.creatorDe Boeck, J.
dc.date2004-06-06
dc.date.accessioned2026-07-07T02:58:31Z
dc.date.available2026-07-07T02:58:31Z
dc.descriptionAn individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.
dc.descriptionProceedings of the SIMD-4 conference. Hawaii, USA (December 1-5, 2003)
dc.identifierhttps://arxiv.org/abs/cond-mat/0406148
dc.identifierhttp://arxiv.org/abs/cond-mat/0406148
dc.identifierSuperlattices and Microstructures 34, 539-545 (2003)
dc.identifierdoi:10.1016/j.spmi.2004.03.055
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24125
dc.subjectMaterials Science
dc.titleCharge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy
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