On the Origin of Schottky Barriers in GaAs(110):Au contacts

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Scanning Tunnelling Spectroscopy of GaAs(110):Au Schottky contacts in cross-sectional configuration has been used to investigate the in-depth properties of the space charge layer as well as the interface region with nanometer resolution.
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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/20944

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0302551
 http://arxiv.org/abs/cond-mat/0302551

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arXiv