On the Origin of Schottky Barriers in GaAs(110):Au contacts

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dc.creatorReusch, T. C. G.
dc.creatorWenderoth, M.
dc.creatorWinking, L.
dc.creatorQuaas, N.
dc.creatorUlbrich, R. G.
dc.date2003-02-26
dc.date2003-04-28
dc.date.accessioned2026-07-07T02:49:48Z
dc.date.available2026-07-07T02:49:48Z
dc.descriptionScanning Tunnelling Spectroscopy of GaAs(110):Au Schottky contacts in cross-sectional configuration has been used to investigate the in-depth properties of the space charge layer as well as the interface region with nanometer resolution.
dc.descriptionwithdrawn for major revisions
dc.identifierhttps://arxiv.org/abs/cond-mat/0302551
dc.identifierhttp://arxiv.org/abs/cond-mat/0302551
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20944
dc.subjectMaterials Science
dc.titleOn the Origin of Schottky Barriers in GaAs(110):Au contacts
dc.typetext

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