Circuit with small-capacitance high-quality Nb Josephson junctions

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We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04-40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K.
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Mesoscale and Nanoscale Physics, Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/22688

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0311332
 http://arxiv.org/abs/cond-mat/0311332
 Appl. Phys. Lett. 84, 410 (2004)
 doi:10.1063/1.1640798

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arXiv