Circuit with small-capacitance high-quality Nb Josephson junctions
| dc.creator | Watanabe, Michio | |
| dc.creator | Nakamura, Yasunobu | |
| dc.creator | Tsai, Jaw-Shen | |
| dc.date | 2003-11-14 | |
| dc.date | 2004-01-16 | |
| dc.date.accessioned | 2026-07-07T02:54:46Z | |
| dc.date.available | 2026-07-07T02:54:46Z | |
| dc.description | We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04-40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K. | |
| dc.description | Published version, RevTeX4 | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0311332 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0311332 | |
| dc.identifier | Appl. Phys. Lett. 84, 410 (2004) | |
| dc.identifier | doi:10.1063/1.1640798 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/22688 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Materials Science | |
| dc.title | Circuit with small-capacitance high-quality Nb Josephson junctions | |
| dc.type | text |