Mott-Hubbard Scenario for the Metal-Insulator Transition in the Two Dimensional Electron Gas

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By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between independent measurables are uncovered and confirmed by replotting the experimental data. A universal critical energy scale vanishing at the MIT is extracted from the experimental data and the critical exponent found.
4 pages, 3 figures

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Strongly Correlated Electrons

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http://salesiana.dossiersoluciones.com/handle/123456789/114641

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0608010
 http://arxiv.org/abs/cond-mat/0608010

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arXiv