Mott-Hubbard Scenario for the Metal-Insulator Transition in the Two Dimensional Electron Gas

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dc.creatorSun, Ping
dc.date2006-08-01
dc.date.accessioned2026-07-07T07:19:29Z
dc.date.available2026-07-07T07:19:29Z
dc.descriptionBy comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between independent measurables are uncovered and confirmed by replotting the experimental data. A universal critical energy scale vanishing at the MIT is extracted from the experimental data and the critical exponent found.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0608010
dc.identifierhttp://arxiv.org/abs/cond-mat/0608010
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/114641
dc.subjectStrongly Correlated Electrons
dc.titleMott-Hubbard Scenario for the Metal-Insulator Transition in the Two Dimensional Electron Gas
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