Spin injection and detection by resonant tunneling structure

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A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The microscopic origin of the effects is the spin-orbit coupling-induced splitting of the resonant level.
Proc. 12th Int. Symp. "Nanostructures: Physics and Technology" (June 2004, St. Petersburg, Russia), 3 pages

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Mesoscale and Nanoscale Physics, Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/24132

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0406191
 http://arxiv.org/abs/cond-mat/0406191

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arXiv