Spin injection and detection by resonant tunneling structure

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dc.creatorGlazov, M. M.
dc.creatorTarasenko, S. A.
dc.creatorAlekseev, P. S.
dc.creatorOdnoblyudov, M. A.
dc.creatorChistyakov, V. M.
dc.creatorYassievich, I. N.
dc.date2004-06-08
dc.date.accessioned2026-07-07T02:58:32Z
dc.date.available2026-07-07T02:58:32Z
dc.descriptionA theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The microscopic origin of the effects is the spin-orbit coupling-induced splitting of the resonant level.
dc.descriptionProc. 12th Int. Symp. "Nanostructures: Physics and Technology" (June 2004, St. Petersburg, Russia), 3 pages
dc.identifierhttps://arxiv.org/abs/cond-mat/0406191
dc.identifierhttp://arxiv.org/abs/cond-mat/0406191
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24132
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleSpin injection and detection by resonant tunneling structure
dc.typetext

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